Imec researchers have set a new benchmark in RF transistor performance for mobile applications. They present a gallium ...

Imec’s RF GaN-on-Si transistor achieves record efficiency and output power for an E-mode device, targeting high-efficiency 6G ...

Belgian research hub Imec has claimed a new benchmark in RF transistor performance for mobile applications with a ...

Photoluminescence Studies of Epitaxial ZnO Thin Films on Si (100) Substrates by Pulsed Laser Deposition. Download PDF Copy; Nov 22 2010. Ashok Kumar, ... ZnO also acts as an ideal buffer layer for GaN ...

Fraunhofer ISIT’s Power Electronics division (which develops prototypes for power electronic and sensor systems) will use ...

GaN transistors fit standard Si packages. February 20, 2025 by Susan Nordyk Comments 0. ... The IGD015S10S1 100-V transistor will be housed in a 5×6-mm routable QFN (RQFN) package, while the ...

WALTHAM, Mass., Aug. 29, 2024 (GLOBE NEWSWIRE) -- Finwave Semiconductor, Inc., a leading innovator in GaN (Gallium Nitride) technology, today announced a strategic technology development and ...

These key patents can enable the rapid prototype development and first-to-market commercialization of novel vertical GaN-on-Si power devices by companies operating in the High-Power Electronics ...

WALTHAM, Mass., May 14, 2025 (GLOBE NEWSWIRE) -- Leading GaN (Gallium Nitride) technology innovator Finwave Semiconductor, Inc. today announced a new $8.2M bridge investment round, led by Fine ...

As part of this agreement, Polar will fabricate High Voltage 650V Class GaN-on-Si devices for Renesas and other customers in its 200mm automotive quality high-volume manufacturing facility in ...