These results are attributed to an accelerated formation of porous silicon caused by a release etch-induced galvanic couple between the structural silicon and the gold electrical contact pads.

Department of Mechanical Engineering, University of Colorado, Boulder, Colorado 80309, United States, and U.S. Army Research Laboratory, Adelphi, Maryland 20783, United States * To whom correspondence ...

It is observed that the oxygen from oxygen functional groups transfers to the surface of Pt and generate PtO during the process of self-assembly with the mechanism of micro galvanic cell, where Pt, ...