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powerelectronicsworld
39 分钟
SiC MOSFETs: Understanding the benefits of plasma nitridation
The team has just determined that its approach – involving plasma nitridation of the SiC surface, sputter deposition of SiO, ...
powerelectronicsworld
1 小时
Wolfspeed reports Q2 results
Wolfspeed has announced results for the second quarter of fiscal 2025. Highlights include consolidated revenue of $181m ...
powerelectronicsworld
4 天
UK team leads diamond-FET breakthrough
At the University of Glasgow’s James Watt Nanofabrication Centre, the team used surface chemistry techniques to improve the ...
powerelectronicsworld
4 天
Vishay launches new high voltage SiC diodes
Vishay has introduced 16 new 650 V and 1200 V SiC Schottky diodes in the industry-standard SOT-227 package. Designed to ...
powerelectronicsworld
5 天
Forvia Hella to use CoolSiC for next generation charging
Forvia Hella, an international automotive supplier, has selected Infineon's new CoolSiC automotive MOSFET 1200 V for its next ...
powerelectronicsworld
11 天
Nordic Semi adds new PMIC for low energy products
Nordic Semiconductor has announced a further addition to its nPM family of Power Management ICs (PMICs), for wireless mice ...
powerelectronicsworld
6 天
German start-up secures finance for SiC processing tech
According to Mi2-factory, chip producers buy EFII to save costs, increase performance increase and enable design innovations ...
powerelectronicsworld
6 天
Infineon introduces new gate drivers for EVs
Infineon Technologies is added new isolated gate driver ICs for electric vehicles to its EiceDRIVER family.
powerelectronicsworld
11 天
Element Six unveils Cu-diamond composite
Element Six (E6), a developer of synthetic diamond material solutions, will launch an innovative Cu-diamond product at ...
powerelectronicsworld
12 天
Step-down DC-DCs offer lowest quiescent current
It can deliver up to 600 mA of output current and is claimed to offer the industry’s lowest operating quiescent current (Iq) ...
powerelectronicsworld
11 天
Turbocharging the GaN MOSFET with a HfO₂ gate
Electrical measurements on vertical GaN MOSFETs revealed a current density of 330 mA mm -1 at a drain bias of 5 V, and a ...
powerelectronicsworld
24 年
SemiQ launches hi-rel 1700V SiC MOSFETs
SemiQ Inc, a developer of SiC devices has announced a family of 1700 V SiC MOSFETs designed to meet the needs of ...
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