Sumitomo Electric and Osaka Metropolitan University have successfully fabricated a GaN-HEMT on a 2-inch polycrystalline ...

From June 10 to 12 at GreenTech 2025 in Amsterdam, Ams Osram will be exhibiting its latest-generation of LED and sensor ...

Ontario-based VueReal, the developer of MicroSolid Printing technology, has announced a partnership with ACA TMetrix, a ...

The project 'GENIE-RFIC: Generative ENgine for Intelligent and Expedited RFIC Design' will focus on GaN MMICs and CMOS RFICs.

Infineon has announced the first of a new family of radiation hardened GaN HEMTs, fabricated at Infineon’s own foundry, based ...

Compared to standard SWIR LEDs, radiant power output of DOWA‘s SMD is higher by 46 percent at the 1,300 nm wavelength range ...

Engineers and researchers who work with diamond for quantum sensors, power electronics or thermal management technologies ...

This patenting activity is marked by the acceleration of Toshiba in the SiC power device patent landscape, bringing it up the ...

Within that family of ultrawide bandgap devices, AlN has generated significant attention for many years. Judged by various ...

Researchers say latch-effect could make GaN-based RF power amplifiers quicker, more powerful and more reliable New research ...

MmWave (30-100GHz) and sub-THz (100-300GHz) bands are seen as the future for next-generation RF systems including wireless ...

This increased optical power output enables higher measurement precision and accelerated processing of biological samples, ...