In recent years, many engineers have been trying to develop hardware components that could emulate the functions of various ...

Researchers propose 3D semiconductor architectures using 2D semiconductor materials for better performance and scalability ...

By using gallium antimonide and indium arsenide instead of silicon, MIT researchers created vertical nanowire transistors. Published in the journal, Nature Electronics, these devices exploit ...

Core MOSFETs are developed from planar transistors and FinFETs to the latest Stacked NanoSheet/NanoWire Gate-All-Around FETs (GAAFETs), and now to the cutting-edge vertical transistor 3D stacking ...

K&S has separately announced the concurrent launch of Asterion ® -PW, extending its leadership in power device applications with a fast and precise ultrasonic pin welding solution. This advanced ...