They used two different configurations of silicon-oxynitride diffusion-barrier layers. “For the formation of CZTSe absorber, a metallic precursor with a structure of zinc/copper-tin/zinc (Zn/Cu ...

Hsinchu, Taiwan, R.O.C. –June 17, 2009 – Taiwan Semiconductor Manufacturing Company (TWSE: 2330, NYSE: TSM) today announced it has successfully developed the first 28-nanometer (nm) low power ...

First, the researchers used a low-temperature (400–700 °C) solid-state reaction of barium amide with silicon dioxide to create a new Ba-Si oxynitride-hydride, Ba3SiO5−xNyHz. The final ...