The MOSFETs with top-side cooling provide better cooling, easy setup, and reliable performance for industrial use and EV ...

Nexperia has introduced a range of highly efficient and robust industrial grade 1200V SiC MOSFETs with industry-leading temperature stability in innovative surface-mount (SMD) top-side cooled ...

NoMIS Power claims a breakthrough in the short-circuit withstand time of SiC MOSFETs; opens up new opportunities in high ...

Nexperia has introduced a range of industrial grade 1200 V SiC MOSFETs in surface-mount (SMD) top-side cooled packaging ...

Nexperia has launched a 1,200V 30mΩ silicon carbide mosfet in a top-side-cooled plastic package with a 18.5 x 14mm footprint.

盖世汽车讯 据外媒报道，先进碳化硅（SiC）功率半导体技术公司NoMIS Power宣布在改善SiC MOSFET的短路耐受时间（SCWT）方面取得了重大突破。这项创新解决了限制SiC技术在高功率应用中广泛采用的关键挑战之一。 图片来源：NoMIS ...

V SiC MOSFET based SPM 31 IPMs. These IPMs deliver the highest energy efficiency and power density in the smallest form factor compared to utilising Field Stop 7 IGBT technology, resulting in lower ...

Jensen Huang’s keynote at GTC 2025, the Android 16 Beta 3 release, the state of solid-state EV battery startups, Nexperia's ...

onsemi has introduced the SPM 31 intelligent power module (IPM), its first generation of 1200V silicon carbide (SiC) metal ...

NoMIS Power says its long SCWT devices are well-screened for latent defects and offer easier gate driver desaturation (dSat) ...

SiC power MOSFETs can cost up to 3X more than the IGBTs ... But it’s also one of the primary culprits of power loss—and, hence, heat—in the EV. The traction inverter operates most of the ...