and a peak clamp sinking current rating of 6.8A, making it suitable as a gate driver for SiC MOSFETs, which are highly sensitive to changes in gate voltage. TLP5814H has an operating temperature r ...

The active Miller clamp circuit has a channel resistance of 0.69Ω (typ.) and a peak clamp sinking current rating of 6.8A, making it suitable as a gate driver for SiC MOSFETs, which are highly ...

NoMIS Power claims a breakthrough in the short-circuit withstand time of SiC MOSFETs; opens up new opportunities in high power applications.

SemiQ’s 1,200-V third-generation SiC MOSFET, in a smaller footprint, reduces switching losses in high power applications.

KAWASAKI, Japan, March 06, 2025--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched a gate driver photocoupler, "TLP5814H," with an output of +6.8A/-4.8A, in a ...

NoMIS Power says its long SCWT devices are well-screened for latent defects and offer easier gate driver desaturation (dSat) ...