With momentum building for Spin Transfer Torque MRAM (STT-MRAM) as the leading flavor of embedded MRAM technology, this white paper focuses on unique test challenges for STT-MRAM on-chip memory while ...

Spin-transfer-torque magnetic random access memory (STT-MRAM) — the most advanced of these emerging technologies for solid-state non-volatile memory — is about to hit the market. This Nature ...

Since spin-transfer torque magnetoresistive RAM (STT-MRAM) only needs to power each bit of memory just during operation, it has a drastically reduced power consumption. Endoh’s team has ...

Everspin Technologies, Inc. faces scaling challenges, declining revenue, and a weak Q1 2025 outlook. Explore more details ...

Today’s best-developed version is called “spin-torque transfer,” or STT MRAM. (There’s an older stand-alone technology called “toggle MRAM,” which is not covered here.) The programming current goes ...

Fig. 1 Basic structure of an MTJ when two ferromagnetic (FM) layers are in parallel and anti-parallel configurations. (Image: KLA Corporation) STT-MRAM offers excellent scaling capability and friendly ...

2. Fast Write Technology with Simultaneous Write Bit Number Optimization and Shortened Mode Transition Time Following the high-speed write technologies for embedded STT-MRAM announced in December 2021 ...

Everspin Technologies, Inc. (NASDAQ: MRAM), the world’s leading developer and manufacturer of Magnetoresistive Random Access ...

In the industrial context, spin transfer torque-MRAM (STT-MRAM) is a suitable candidate for demonstrating the benefits of such quantum metrology. STT-MRAM is a promising non-volatile, next ...

Our 4-megabit to 128-megabit STT-MRAM persist family is now validated for configuration across all Lattice Semiconductor FPGAs. Enabled through the lattice-radiant software suite, this validation ...