SemiQ is aiming at solar inverters with 1,200V SiC mosfets that are avalanche tested to 800mJ, some co-packaged with silicon carbide Schottky diodes – all have intrinsic reverse diodes. There are four ...

The high-performance SiC diodes are also notable for their lowest reverse leakage (I R) in the industry, at 20µA (max.). This minimizes heat dissipation and conduction losses, improving system ...

(NYSE: VSH) has announced the launch of 16 new 650 V and 1200 V silicon carbide (SiC) Schottky diodes, designed for ...

It is the second course in the "Semiconductor Power Device" specialization that focusses on diodes, MOSFETs, and IGBTs but also covers legacy devices (BJTs, Thyristors and TRIACS) as well as ...

The COPACK MOSFETs with Schottky barrier diode provides exceptional switching losses at high junction temperature due to the low turn on switching losses. SemiQ is targeting the SiC MOSFET modules at ...