Toshiba has developed a SiC MOSFET that arranges embedded Schottky barrier diodes in a check pattern to achieve both low on-resistance and high reliability. The company reports that the design reduces ...

SemiQ has put 1,200V silicon carbide mosfet and Schottky diode half-bridges into standard ’62mm’ industrial power modules. There are four parts, each measuring 62 x 106.5 x 17mm (plus terminals): two ...

SemiQ is aiming at solar inverters with 1,200V SiC mosfets that are avalanche tested to 800mJ, some co-packaged with silicon carbide Schottky diodes – all have intrinsic reverse diodes. There are four ...

Diodes has expanded its silicon carbide (SiC) product portfolio with a series of five high-performance, low figure-of-merit (FOM) 650V SiC Schottky diodes. Diodes unveils new SiC Schottky diodes ...

The FMCA series of silicon-carbide (SiC) Schottky barrier diodes ... thanks to a high-speed switching SiC-MOSFET, which delivers low resistance, the diodes eliminate the thermal runway, leading ...

The high-performance SiC diodes are also notable for their lowest reverse leakage (I R) in the industry, at 20µA (max.). This minimizes heat dissipation and conduction losses, improving system ...

An SiC Schottky diode has about 40 times lower ... which leads to the requirement of larger die devices for both MOSFET and boost diode in order to meet efficiency and thermal specifications.

The RGWxx65C series utilizes ROHM’s low-loss SiC Schottky barrier diodes in the IGBT’s feedback block as a freewheeling diode that ... Both effects together result in up to 67% lower loss over ...