The SiC Schottky diode in a TO-247-2 package simplifies design transitions, reduces component count, and enhances system ...

SemiQ’s 1,200-V third-generation SiC MOSFET, in a smaller footprint, reduces switching losses in high power applications.

The diode family perfectly matches the CoolSiC MOSFETs 2000V in the TO-247Plus-4 HCC package, which the company launched in the spring of 2024. In addition to the TO-247-2 package, the diode is also ...

Nexperia has launched a 1,200V 30mΩ silicon carbide mosfet in a top-side-cooled plastic package with a 18.5 x 14mm footprint.

(NYSE: VSH) has announced the launch of 16 new 650 V and 1200 V silicon carbide (SiC) Schottky diodes, designed for high-frequency applications where speed and efficiency are critical. The devices ...

It is the second course in the "Semiconductor Power Device" specialization that focusses on diodes, MOSFETs, and IGBTs but also covers legacy devices (BJTs, Thyristors and TRIACS) as well as ...