The interface at which p-type silicon and n-type silicon make contact with each other. At this coupling point, free electrons (n-type) and holes (p-type) cancel each other and form a "depletion ...

This course presents in-depth discussion and analysis of pn junction and metal-semiconductor contacts including equilibrium behavior, current and capacitance responses under bias, breakdown, ...

This image shows a state-of-the-art design of GaN p-n junction diodes that has resulted in near-unity ideality factor, avalanche breakdown capability, and record-breaking power performance.

The four-layer diode was the key to William Shockley's plan to revolutionize AT&T's phone system. It was a great device in theory, but not in practice -- at least not at the time when Shockley ...

A research team has developed high-performance diamond/ε-Ga 2 O 3 heterojunction pn diodes based on ultrawide bandgap ...