In addition, Vishay will provide a portfolio roadmap for 650 V to 1,700 V SiC MOSFETs with on-resistances ranging from 10 mΩ to 560 Ω. Vishay’s SiC platform is based on a proprietary MOSFET technology ...

Maintenance cost : The life of low-reliability domestic silicon carbide MOSFET devices is only 1-2 years (the life of ...

Alpha and Omega Semiconductor (AOS) has introduced two new surface-mount package options for its high-power MOSFET portfolio.

InvestorPlace - Stock Market News, Stock Advice & Trading Tips In 1844, American inventor Samuel Morse transmitted the first long-distance ...

The AO4606 integrates two powerful N-channel and P-channel MOSFETs to create a complete H-bridge circuit. This innovative design simplifies circuit layouts while enhancing integration and reliability.

Housed in a small SO8L package, Toshiba’s TLP5814H gate driver photocoupler provides an active Miller clamp for driving SiC ...

The state-of-the-art topside cooling (GTPAK™) and gull-wing (GLPAK™) packages meet increased performance and robust environmental demands State-of-the-art topside cooling (GTPAK™) and gull ...

Power management leader, Kinetic Technologies, is expanding its Power over Ethernet (PoE) portfolio with the introduction of ...

Infineon is introducing a radiation-tolerant p-channel plastic-packged power mosfet for low-earth-orbit (LEO) space ...

"Successful deployment of next-generation LEO satellite constellations and other space-ready systems require radiation-tolerant discretes and ICs with lead times and production volumes that enable ...

AOS releases state-of-the-art surface mounting package options for its industry-leading high power MOSFET portfolio ...