然而，事情并非如此简单：为了在SiC制造领域站稳脚跟，就必须拥有专门用于SiC的昂贵设备。SiC晶圆的生长温度超过2700℃，生长速度至少比Si慢200倍，这就需要大量的能量。另一方面，GaN在很大程度上可以使用与Si半导体制程相同的设备，GaN外延晶圆还可以在各自的基板 (通常是Si、SiC或蓝宝石)上生长，温度为1000至1200℃，还不到SiC的一半。此外，SiC晶圆也比Si晶圆薄近50% ...

While USB-C chargers and adapters have been the forerunners, GaN is now on its way to reaching tipping points in its adoption in further industries, substantially driving the market for GaN-based ...

Navitas Semiconductor,. which makes the GaNFast GaN and GeneSiC SiC power semiconductors, has announced that both ...

SiC and GaN advances used improved device structures and higher levels of integration to support higher voltages and power densities while reducing solution cost. Meanwhile, ...

BofA Securities increased its price target for Infineon Technologies AG (IFX:GR) (OTC: OTC:IFNNY) shares to €44.00 from the previous €40.00, while reaffirming a Buy rating on the stock. The adjustment ...

They are facing stiff competition from traditional SiC device vendors such as Cree, Infineon, Rohm and STMicroelectronics ... That’s where SiC and gallium nitride (GaN) fit in. Both GaN and SiC are ...

ALOR SETAR: The opening of a 200mm silicon carbide power semiconductor ... The Prime Minister said the new facility at Infineon Technologies will enhance Malaysia's global profile in attracting ...

Switching transistors made from the semiconductor material silicon carbide ... desktop PC power supply with SiC technology on the market. The SiC MOSFETs (from Infineon) and other optimizations ...

Market opportunity drives expansion Wide-bandgap semiconductors, such as silicon carbide (SiC) and gallium nitride (GaN), are gaining significant traction due to their advantages over traditional ...