Infineon has developed 300mm power GaN wafers which deliver 2.3x more ICs per wafer than 200mm. “This remarkable success is the result of our innovative strength and the dedicated work of our global ...

A Germany-based global semiconductor leader has developed the the world’s first 300 mm power gallium nitride (GaN) wafer technology. Infineon Technologies claims that the company is first ...

Infineon said it will present the first 300 mm GaN wafers to the public at the electronica trade show in November in Munich.

Infineon has introduced 300-mm power GaN wafer technology within a scalable, high-volume manufacturing environment. The company notes that 300-mm wafers offer significant technological and efficiency ...

Infineon has announced a groundbreaking development in power semiconductor technology with the introduction of the world’s first 300 mm power gallium nitride (GaN) wafer technology. Germany ...

Infineon Technologies AG (FSE: IFX) (OTCQX: IFNNY) today announced that the company has succeeded in developing the world's first 300 mm power gallium nitride (GaN) wafer technology. Infineon is ...

German chipmaker Infineon has successfully developed the world’s first 300mm power gallium nitride (GaN) wafers. The company said that the breakthrough will help to boost the market for GaN-based ...

With this technological masterpiece, we are solidifying our position as the industry’s innovation leader by mastering all three relevant semiconductor materials: Si, SiC and GaN.” To overcome the ...

TAIPEI -- Leading European chipmaker Infineon says it has developed the world's first 12-inch gallium nitride (GaN) wafer technology as it looks to capture rapidly growing demand for power ...