Infineon said it will present the first 300 mm GaN wafers to the public at the electronica trade show in November in Munich.

A Germany-based global semiconductor leader has developed the the world’s first 300 mm power gallium nitride (GaN) wafer technology. Infineon Technologies claims that the company is first ...

German chipmaker Infineon has successfully developed the world’s first 300mm power gallium nitride (GaN) wafers. The company said that the breakthrough will help to boost the market for GaN-based ...

Infineon has introduced 300-mm power GaN wafer technology within a scalable, high-volume manufacturing environment. The company notes that 300-mm wafers offer significant technological and efficiency ...

The announcement comes less than two months after the German chipmaker announced it had successfully developed the world’s first 300mm power gallium nitride (GaN) wafers. In a statement, Infineon said ...

Infineon Technologies AG (FSE: IFX) (OTCQX: IFNNY) today announced that the company has succeeded in developing the world's first 300 mm power gallium nitride (GaN) wafer technology. Infineon is ...

Infineon has developed 300mm power GaN wafers which deliver 2.3x more ICs per wafer than 200mm. “This remarkable success is the result of our innovative strength and the dedicated work of our global ...

(RTTNews) - German semiconductor maker Infineon Technologies AG (IFNNY) announced Wednesday the development of the world's first 300 mm power gallium nitride or GaN wafer technology. The ...

Infineon has unveiled the world’s thinnest silicon power wafers, with a thickness of 20 micrometers and a diameter of 300 millimeters. The company said the newly produced wafers are half as ...