While GaN semiconductors have been in use since the 1990s, primarily in light-emitting diodes (LEDs), this advancement in larger wafer technology is a major step forward to bring both increased ...
OSRAM has developed a technology to assemble very large GaN chiplet patterning 25,600 microLEDs. Nichia developed a different ...
3 小时
AZoM on MSNEngineering Tailored Configurations in van der Waals MaterialsPohang University and University of Montpellier researchers synthesize AA-stacked hBN, revealing novel stacking control ...
I have been talking about GaN on Silicon for several years because it offers a path to cost reduction in LED’s in the same way as silicon semiconductors. This year at Photonics West 2015, Aixtron ...
5 个月on MSN
The GaN wafer’s unique crystal structure is key to its dual functionality. Each side of the wafer has different properties, ...
1 天on MSN
Researchers from Pohang University of Science and Technology (POSTECH) and the University of Montpellier have successfully ...
a) Cross sectional structure. b) TEM image of top 80 nm of the HEMT structure. The dark gray layer marks the start of the surface. c) STEM image of top 80 nm. The surface starts beneath the black ...
BluGlass’s high-power single-mode MOPA combines the benefits of a single-mode laser, and small form factor advantages for ...
RS: The progress of the compound semiconductor industry can be seen in the increase in substrate size. Your company talks about this, using the phrase ‘Going large’. You feel that the first ...
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