This highlights the need for tailored approaches to ion implantation based on the specific characteristics of the GaN structure being used. Ion Implantation: A process used to introduce impurities ...

However, very small structure sizes provoke disruptive short ... in Ka-, Q- and W-band using the newly developed GaN HEMTs.

The GaN wafer’s unique crystal structure is key to its dual functionality. Each side of the wafer has different properties, ...