6 月，雷诺和 STMicroelectronics 联手开发用于 EV 和 HEV 的 SiC 和 GaN 器件。对于 Wolfspeed、Infineon、STMicroelectronics、Rohm 和 onsemi 来说重要的是，汽车 OEM 也 ...

GaN、SiC功率元件持续成长轨迹 根据Yole ... Yole的报告中指出，2023年，英飞凌科技(Infineon Technologies)、安森美(Onsemi)、罗姆(ROHM)、意法半导体 ...

2009-2019年期间，全球共关闭了100座晶圆代工厂。恰逢最新一轮全球规模芯片缺货潮，半导体产业遭遇了前所未有的危机。坚持IDM模式的厂商开始改变观念，2021年英特尔决定把部分芯片外包给台积电，这个变化被业内视为委外代工已成趋势，但在SiC和GaN领域，似乎 ...

GaN和SiC器件比它们正在替代的硅元件性能 ... Rohm有一个沟槽MOSFET（金属氧化物半导体场效应晶体管）；Infineon Technologies、ON Semiconductor Corp ...

华泰证券发布研究报告称，SiC和GaN作为新型功率半导体材料，已进入快速发展阶段。2018年特斯拉的功率器件应用加速了SiC应用于新能源车的进程。

Infineon Technologies is working to maintain ... including silicon carbide (SiC) and gallium nitride (GaN),... Save my User ID and Password Some subscribers prefer to save their log-in information ...

Infineon has announced the first of a new family of radiation hardened GaN HEMTs, fabricated at Infineon’s own foundry, based ...

Infineon Technologies has announced the development of the world's first 300mm power gallium nitride (GaN) wafer technology. The company claims to be the first to effectively implement this ...

Infineon, and Renesas. This will soon make GaN a realistic and widespread solution for EV power electronics. Over the next decade, one can expect the coexistence of Si, SiC, and GaN in the EV power ...