Navitas Semiconductor,. which makes the GaNFast GaN and GeneSiC SiC power semiconductors, has announced that both ...

NVTS), the industry leader in next-generation GaNFast gallium nitride (GaN) and GeneSiC silicon carbide (SiC) power semiconductors, today announced its adoption of both technologies into Dell’s ...

Market opportunity drives expansion Wide-bandgap semiconductors, such as silicon carbide (SiC) and gallium nitride (GaN), are gaining significant traction due to their advantages over traditional ...

Feb. 05, 2025 (GLOBE NEWSWIRE) -- Navitas Semiconductor (Nasdaq: NVTS), the industry leader in next-generation GaNFast gallium nitride (GaN) and GeneSiC silicon carbide (SiC) power semiconductors, ...

GaN is a novel material that offers higher power conversion efficiency than traditional silicon. While not quite as efficient as silicon carbide (SiC), it is also less expensive to produce ...

Silicon carbide (SiC) is a wide-bandgap semiconductor material ... all common semiconductor substrates, such as SiC, Si, GaAs, InP, and GaN. Ion implantation is crucial in 4H-SiC semiconductor ...

Imec has demonstrated electrically-driven GaAs-based multi-quantum-well nano-ridge laser diodes fully, monolithically fabricated on 300 mm silicon wafers in its CMOS pilot prototyping line. Achieving ...