Imec’s RF GaN-on-Si transistor achieves record efficiency and output power for an E-mode device, targeting high-efficiency 6G ...

Imec researchers have set a new benchmark in RF transistor performance for mobile applications. They present a gallium ...

Belgian research hub Imec has claimed a new benchmark in RF transistor performance for mobile applications with a ...

Photoluminescence Studies of Epitaxial ZnO Thin Films on Si (100) Substrates by Pulsed Laser Deposition. Download PDF Copy; Nov 22 2010. Ashok Kumar, ... ZnO also acts as an ideal buffer layer for GaN ...

The IGD015S10S1 100-V transistor will be housed in a 5×6-mm routable QFN (RQFN) package, while the IGE033S08S1 80-V variant will come in a 3.3×3.3-mm RQFN package. ... 0 comments on “ GaN transistors ...

To produce their mirrors by MOCVD, the team employed a temperature difference of just 150 °C between InGaN and the AlGaN/GaN ...

WALTHAM, Mass., Aug. 29, 2024 (GLOBE NEWSWIRE) -- Finwave Semiconductor, Inc., a leading innovator in GaN (Gallium Nitride) technology, today announced a strategic technology development and ...

These key patents can enable the rapid prototype development and first-to-market commercialization of novel vertical GaN-on-Si power devices by companies operating in the High-Power Electronics ...

WALTHAM, Mass., May 14, 2025 (GLOBE NEWSWIRE) -- Leading GaN (Gallium Nitride) technology innovator Finwave Semiconductor, Inc. today announced a new $8.2M bridge investment round, led by Fine ...

As part of this agreement, Polar will fabricate High Voltage 650V Class GaN-on-Si devices for Renesas and other customers in its 200mm automotive quality high-volume manufacturing facility in ...