电子工程专辑3 天
AI狂飙下的电源革命：SiC与GaN如何改写万亿能效规则
都说AI接下来要创造万亿级别的市场价值，在生成式AI、机器人（Physical AI）为热门话题的大背景下，电源及周边技术与产品的发展必然呈井喷之势：尤其推动宽禁带半导体市场前行——参与本届论坛的6家企业中，有5家都花较大篇幅谈到了SiC（碳化硅）或GaN ...
电子工程专辑8 天
近30家SiC/GaN企业集结上海，2025最新技术集中亮相
大族半导体主要研究应用于硅、SiC、砷化镓、GaN等材料的加工工艺，生产制造从精细微加工，到视觉检测等一系列自动化专业装备。公司设备广泛应用于集成电路制造、第三代半导体、LED、面板等制造领域，未来致力于成为半导体装备制造领域标杆企业。
Electronic Design9 天
Dynamically Testing WBG Power Semiconductors Down to the Die
Upgrades to Keysight’s double-pulse test systems bring easier and even higher-accuracy measurement of dynamic characteristics ...
DRDO’s solid state physics laboratory develops Silicon Carbide and GaN Technology for ...
This breakthrough GaN/SiC technology is a vital component for next-generation defense, aerospace, and sustainable energy ...
Electronics Weekly25 天
APEC: small GaN transistors improve EV IGBT traction inverters
It involves connecting GaN hemts in parallel with large silicon IGBTs, and has been branded ‘Combo ICeGaN ‘. “Today, inverters for EV powertrains either use IGBTs which are low cost but inefficient at ...
New Electronics25 天
CGD announces breakthrough 100kW+ technology
Giorgia Longobardi, founder and CEO of CGD said, “Today, inverters for EV powertrains either use IGBTs which are low cost but inefficient at light load conditions, or SiC devices which are very ...
Electronics Weekly1 年
NSREC: GaN transistors in PSU design for space AI processor
four ISL73041SEH GaN gate drivers and 12x ISL70020SEH 40V GaN HEMTs. It can be modified to deliver 140A peaks, and for continuous 140A delivery “Renesas recommends using a separate PCB design to ...