Both capacitively (RIE) and inductively (ICP) coupled plasma etcher with fluorine-based gases (CF4, CHF3, C4F8, SF6), BCl3, nitrogen, argon, and oxygen for anisotropic dry etching of Si-based ...

In a conventional plasma etching chamber, the incident ions bombard the ... rough and irregular surfaces in practice. Nevertheless, dry adhesives have numerous applications in nanoelectronics ...

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