Navitas Semiconductor will be exhibiting several GaN and SiC breakthroughs in AI data centres, EVs, motor drives, and ...

Relative to SiC, GaN devices can be smaller because of the material’s ability to operate at higher frequencies. On the other hand, SiC is a better match with silicon, making reliable SiC devices on ...

As GaN and SiC power technologies deliver faster ... achieving 3x more power and 3x faster charging in half the size and weight compared to prior designs with legacy silicon power devices. Navitas ...

Polar received up to $123 million through the CHIPS and Science Act to double its U.S. production capacity of sensor and power chips. This direct funding was part of more than $525 million from ...

The market is growing, driven by the emergence of III-V materials such as silicon carbide (SiC) and gallium nitride (GaN), growing demand for high-temperature applications across increasing ...

Modern ultra-fast-transition transistors made from silicon carbide (SiC) and gallium nitride (GaN) would bring 10-fold reductions in power losses in power electronics. The chief concern about these ...

Upgrades to Keysight’s double-pulse test systems bring easier and even higher-accuracy measurement of dynamic characteristics of bare wide-bandgap power semiconductor dies. Double-pulse testing ...