Techniques for Band Gap Engineering vary, including doping, the introduction of impurities into a semiconductor to alter its electrical properties; strain engineering, where stress is applied to ...
That's the kind of technology that researchers at Kyoto University have developed for the band gap of semiconductor materials. The work is published in the journal Computational Materials Science.
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see the entire Power input 1.8v, VBG=0.75V Band-gap, UMC 28nm HPC Logic process datasheet get in contact with Power input 1.8v, VBG=0.75V Band-gap, UMC 28nm HPC Logic ...
It is predicted to be a semiconductor with a band gap appropriate for electronic devices, ultra-high charge carrier mobility far surpassing that of silicon, and ultimate strength comparable to ...
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