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电子工程专辑
3 年
仿真看世界之SiC MOSFET单管的并联均流特性-电子工程专辑
基于以上TO247-4pin的SiC MOSFET两并联的仿真条件与结果,我们可以得到如下一些初步的结论: 1、并联单管的源极电感Lex差异,SiC MOSFET的开通与关断的均流对此非常敏感。因为,源极电感的差异也会耦合影响到驱动回路,以进一步影响均流。
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