NEO Semiconductor has announced progress on its new 3D X-DRAM technology, with new 1T1C and 3T0C chip designs increasing DRAM ...

NEO Semiconductor, a leading developer of innovative technologies for 3D NAND flash memory and 3D DRAM, announced today the ...

T1C and 3T0C designs combine performance of DRAM with manufacturability of NAND, enabling cost-effective, high-yield ...

such as 3D NAND and finFETs For these devices, chipmakers face a multitude of challenges in the fab. But one surprising and oft-forgotten technology is emerging as perhaps the biggest challenge in ...

Since the 20nm node, advancements in DRAM process technology have decelerated, with development from 19 to 11nm occurring in ...

19. Disclosures included power and performance updates for Intel’s 10 nm process, high-level plans for Intel’s first 10 nm FPGA, and an announcement that the company is shipping the industry’s first ...

The ALD Tungsten process is helping 3D NAND manufacturers overcome the technical challenges of producing memory chips with higher storage capacity. 3D NAND is a type of non-volatile memory, which ...

NAND Flash is a type of non-volatile memory technology that has revolutionized data storage in the digital age. It is a form of flash memory, which means it can be electrically erased and reprogrammed ...

Workarounds include stacking more layers on top of each other (3D NAND) and increasing the number of voltage levels – and thus bits – within an individual cell. Although this has boosted the ...