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On Monday, memory and storage vendor Micron announced that its new 176-layer 3D NAND (the storage medium underlying most SSDs) process is in production and has begun shipping to customers.
The memory cells in 3D NAND are stacked vertically ... where a pair of 116-layer dies are sandwiched together in a process called string stacking. Micron said it is pairing the improved storage ...
20d
Tom's Hardware on MSN3D X-DRAM aims for 10x capacity of today's memory — NEO Semiconductor's memory has up to 512 Gb per moduleNEO Semiconductor has announced progress on its new 3D X-DRAM technology, with new 1T1C and 3T0C chip designs increasing DRAM speeds by an order of magnitude for tomorrow’s top-end computing.
Researchers have developed a hydrogen fluoride plasma technique that doubles the etching rate in the manufacturing process of 3D NAND flash memory chips. Standard NAND flash storage is used in ...
It can be manufactured using today’s 3D NAND-like process and only needs one mask to define the bit line holes and form the cell structure inside the holes. This cell structure simplifies the process ...
"The advancement of 3D NAND technology is crucial for innovation ... thanks to the specific recent process improvements. Key features of the X3-9070 include: "Tested and adopted across global ...
T1C and 3T0C designs combine performance of DRAM with manufacturability of NAND, enabling cost-effective, high-yield ...
Micron’s new i400 microSD line is being manufactured using the company’s 176-layer 3D NAND process with a focus on performance and endurance, and is being positioned primarily as a storage ...
July 31, 2024 /PRNewswire/ -- Lam Research Corp. (Nasdaq: LRCX) today extended its leadership in 3D NAND flash memory etching ... confined plasma reactors, process improvements and temperatures ...
NAND Flash is a type of non-volatile memory technology that has revolutionized data storage in the digital age. It is a form of flash memory, which means it can be electrically erased and reprogrammed ...
Manufacturing-Friendly – Uses a modified 3D NAND process, with minimal changes, enabling full scalability and rapid integration into existing DRAM manufacturing lines. Ultra-High Bandwidth ...
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